Xu Xiaofeng science and Technology Daily reporter Xie Kaifei
There is a new way to enter “metaverse”! The reporter learned from Fuzhou University on March 4 that Professor Li Fushan’s team, together with researcher Qian Lei of Ningbo Institute of materials, Chinese Academy of Sciences, proposed a new strategy to suppress the leakage current of high-resolution devices by using the combination of ordered molecular self-assembly technology and transfer printing technology, and prepared high-performance ultra-high-resolution quantum dot light emitting diodes (LEDs). Relevant research papers have been published online in the international top journal Nature photonics.
In recent years, driven by emerging concepts such as “metaverse” and intelligent medical treatment, the next generation display has set higher standards for pixel resolution to meet the escalating application needs of massive information and near eye display. It is an important way to enter “metaverse” to develop a very high-resolution display with 1000 or even 10000 PPI (the number of pixels per inch) that can output massive information in a small space. Quantum dot light emitting diodes have broad application prospects in the field of lighting and display because of their excellent photoelectric characteristics, such as high color purity and high luminous efficiency. However, how to realize the high-resolution pixelation of quantum dot LED is still a key bottleneck.
In this study, the researchers used the ordered molecular self-assembly technology to realize the dense defect free quantum dot monolayer film, and combined with the transfer printing technology to realize the ultra-high resolution quantum dot display of submicron pixels, with a maximum resolution of ~ 25000ppi (the ultimate resolution of the human eye is about 300ppi), realizing the uniform pickup and release of the quantum dot patterned film, Submicron LED can be easily prepared. This is one of the highest pixel densities of display devices reported so far.
It is worth mentioning that the research team proposed for the first time to embed a non luminous charge barrier layer with honeycomb pattern between luminous quantum dot pixels. This uniform and dense barrier layer effectively reduces the leakage current of the device and greatly improves the efficiency of the device. Compared with previous studies, this achievement has better performance in high-resolution quantum dot display, and opens up a new route for realizing ultra-high-resolution luminescence display with high performance.
It is reported that this new high-resolution patterning method can further realize full-color display in the future. The prospect of ultra-high resolution quantum dot light emitting diodes can be applied to the next generation of “near eye” devices, such as head mounted displays and smart glasses for virtual reality (VR) and augmented reality (AR) applications.
(a) Lb-tp process diagram; (b) Optical microscope image of microstructure PDMS seal; (C-D) scanning electron microscope image of microstructure PDMS seal (diameter, spacing and height are 500 nm). Map provided by Fuzhou University